Relationship between mobility and strain in CVD graphene on h-BN
Author(s) -
Takatoshi Yamada,
Yuki Okigawa,
Masataka Hasegawa,
Kenji Watanabe,
Takashi Taniguchi
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0019621
Subject(s) - graphene , materials science , electron mobility , raman spectroscopy , chemical vapor deposition , band gap , boron nitride , optoelectronics , hexagonal boron nitride , full width at half maximum , field effect transistor , transistor , nanotechnology , optics , voltage , electrical engineering , physics , engineering
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