Open AccessElectrical compensation and cation vacancies in Al rich Si-doped AlGaN
Author(s) -
Igor Prozheev,
Frank Mehnke,
Tim Wernicke,
Michael Kneissl,
F. Tuomisto
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0016494
Subject(s) - doping , vacancy defect , materials science , epitaxy , doppler broadening , annihilation , analytical chemistry (journal) , metalorganic vapour phase epitaxy , silicon , positron annihilation , impurity , optoelectronics , crystallography , chemistry , positron , nanotechnology , spectral line , electron , physics , organic chemistry , layer (electronics) , quantum mechanics , astronomy , chromatography
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