Open AccessIn operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application
Author(s) -
Kasey Hogan,
Miguel Rodríguez,
Emma Rocco,
Vincent Meyers,
Benjamin McEwen,
F. ShahedipourSandvik
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0015517
Subject(s) - materials science , irradiation , optoelectronics , electron beam processing , cathode ray , planar , voltage , current density , acceleration voltage , dark current , wide bandgap semiconductor , electron , physics , photodetector , quantum mechanics , computer science , computer graphics (images) , nuclear physics
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