Open AccessAnnealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams
Author(s) -
Akira Uedono,
Kanako Shojiki,
Kenjiro Uesugi,
Shigefusa F. Chichibu,
Shoji Ishibashi,
Marcel Dickmann,
Werner Egger,
C. Hugenschmidt,
Hideto Miyake
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0015225
Subject(s) - annealing (glass) , vacancy defect , epitaxy , sapphire , materials science , sputtering , metalorganic vapour phase epitaxy , thin film , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , metallurgy , optics , layer (electronics) , laser , physics , chromatography
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