Open AccessAlloy segregation at stacking faults in zincblende GaN heterostructures
Author(s) -
Boning Ding,
Martin Frentrup,
Simon M. Fairclough,
Menno J. Kappers,
Manish Jain,
András Kovács,
D. J. Wallis,
Rachel A. Oliver
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0015157
Subject(s) - stacking , indium , materials science , stacking fault , heterojunction , alloy , wide bandgap semiconductor , optoelectronics , molecular beam epitaxy , nitride , transmission electron microscopy , layer (electronics) , crystallography , condensed matter physics , epitaxy , chemistry , metallurgy , nanotechnology , physics , organic chemistry
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