Open AccessInfluence of implanted Mg concentration on defects and Mg distribution in GaN
Author(s) -
Ashutosh Kumar,
Wei Yi,
Jun Uzuhashi,
T. Ohkubo,
Jun Chen,
Takashi Sekiguchi,
Ryo Tanaka,
Shinya Takashima,
Masaharu Edo,
K. Hono
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0014717
Subject(s) - cathodoluminescence , ion implantation , atom probe , materials science , acceptor , vacancy defect , annealing (glass) , dislocation , transmission electron microscopy , analytical chemistry (journal) , ion , gallium , nitride , crystallography , luminescence , chemistry , metallurgy , nanotechnology , optoelectronics , organic chemistry , physics , condensed matter physics , chromatography , layer (electronics) , composite material
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