Open AccessActive dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
Author(s) -
Monia Spera,
Giuseppe Greco,
Andrea Severino,
Marilena Vivona,
Patrick Fiorenza,
Filippo Giannazzo,
Fabrizio Roccaforte
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0012029
Subject(s) - ohmic contact , silicon carbide , materials science , doping , dopant , contact resistance , thermionic emission , wide bandgap semiconductor , analytical chemistry (journal) , silicon , optoelectronics , nanotechnology , electron , chemistry , layer (electronics) , metallurgy , physics , quantum mechanics , chromatography
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