Study of resonant transport in InAs-based quantum hot electron transistors | Zendy

H. Nguyen Van | Zendy; А. Н. Баранов | Zendy; R. Teissier | Zendy; M. Zaknoune | Zendy

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Study of resonant transport in InAs-based quantum hot electron transistors

Author(s) -

H. Nguyen Van,

А. Н. Баранов,

R. Teissier,

M. Zaknoune

Publication year - 2020

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0011780

Subject(s) - common emitter , transistor , optoelectronics , quantum tunnelling , materials science , heterojunction , electron , bipolar junction transistor , quantum well , heterostructure emitter bipolar transistor , voltage , electrical engineering , physics , optics , engineering , quantum mechanics , laser

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

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