Open AccessMechanism of charge redistribution at the metal–semiconductor and semiconductor–semiconductor interfaces of metal–bilayer MoS2 junctions
Author(s) -
Qian Wang,
Yangfan Shao,
Xingqiang Shi
Publication year - 2020
Publication title -
the journal of chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.071
H-Index - 357
eISSN - 1089-7690
pISSN - 0021-9606
DOI - 10.1063/5.0010849
Subject(s) - semiconductor , redistribution (election) , materials science , schottky barrier , work function , bilayer , band gap , metal , condensed matter physics , chemical physics , optoelectronics , nanotechnology , chemistry , layer (electronics) , diode , physics , membrane , biochemistry , politics , political science , law , metallurgy
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