Open AccessMoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications
Author(s) -
MingYang Cha,
Hao Liu,
Tianyu Wang,
Lin Chen,
Hao Zhu,
Ji Li,
Qingqing Sun,
David Wei Zhang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0010829
Subject(s) - ferroelectricity , materials science , atomic layer deposition , dielectric , optoelectronics , capacitor , non volatile memory , molybdenum disulfide , transistor , field effect transistor , gate dielectric , high κ dielectric , layer (electronics) , ferroelectric capacitor , polarization (electrochemistry) , molybdenum , nanotechnology , electrical engineering , voltage , composite material , chemistry , metallurgy , engineering
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