Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate | Zendy

Latifah AlMaghrabi | Zendy; Chen Huang | Zendy; Davide Priante | Zendy; Meng Tian | Zendy; JungWook Min | Zendy; Chao Zhao | Zendy; Huafan Zhang | Zendy; Ram Chandra Subedi | Zendy; Hala H. Alhashim | Zendy; Haiding Sun | Zendy; Tien Khee Ng | Zendy; Boon S. Ooi | Zendy

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Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate

Author(s) -

Latifah AlMaghrabi,

Chen Huang,

Davide Priante,

Meng Tian,

JungWook Min,

Chao Zhao,

Huafan Zhang,

Ram Chandra Subedi,

Hala H. Alhashim,

Haiding Sun,

Tien Khee Ng,

Boon S. Ooi

Publication year - 2020

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0008112

Subject(s) - materials science , nanowire , schottky barrier , heterojunction , optoelectronics , semiconductor , piezoelectricity , schottky diode , substrate (aquarium) , wide bandgap semiconductor , nanotechnology , diode , oceanography , composite material , geology

We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline Funding No. BAS/1/1614-01-01, MBE equipment Funding Nos. C/M-20000-12-001-77 and KCR/1/4055-01-01, the National Natural Science Foundation of China under Grant No. 61905236, the University of Science and Technology of China (USTC) under Grant No. KY2181, the USTC National Synchrotron Radiation Laboratory Grant No. KY2199.

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