Faraday-cage-assisted etching of suspended gallium nitride nanostructures | Zendy

Geraint P. Gough | Zendy; A. Sobiesierski | Zendy; Saleem Shabbir | Zendy; Stuart Thomas | Zendy; D. M. Beggs | Zendy; Robert A. Taylor | Zendy; A. J. Bennett | Zendy

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Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Author(s) -

Geraint P. Gough,

A. Sobiesierski,

Saleem Shabbir,

Stuart Thomas,

D. M. Beggs,

Robert A. Taylor,

A. J. Bennett

Publication year - 2020

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0007947

Subject(s) - undercut , faraday cage , etching (microfabrication) , materials science , gallium nitride , cantilever , plasma etching , optoelectronics , gallium , inductively coupled plasma , cage , wide bandgap semiconductor , plasma , optics , nanotechnology , composite material , layer (electronics) , metallurgy , structural engineering , magnetic field , physics , quantum mechanics , engineering

We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.

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