Open AccessTermination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces
Author(s) -
Zhaofu Zhang,
Yuzheng Guo,
John Robertson
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0007479
Subject(s) - condensed matter physics , gallium arsenide , arsenide , schottky barrier , materials science , supercell , fermi level , semiconductor , chemistry , electron , optoelectronics , physics , thunderstorm , diode , quantum mechanics , meteorology
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