Realization of fast switching speed and electronic synapse in Ta/TaOx/AlN/Pt bipolar resistive memory
Author(s) -
Gang Cao,
Xiaobing Yan,
Jingjuan Wang,
Zhenyu Zhou,
Jianzhong Lou,
Kaiyou Wang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0007393
Subject(s) - neuromorphic engineering , materials science , conductance , optoelectronics , resistive random access memory , realization (probability) , resistive touchscreen , non volatile memory , voltage , computer science , electrical engineering , condensed matter physics , physics , artificial neural network , statistics , mathematics , engineering , machine learning , computer vision
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