Open AccessOrigin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
Author(s) -
Xia Wan-Ying,
Xianwen Sun,
Yanfeng Yin,
Caihong Jia,
Guoqiang Li,
Weifeng Zhang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0007173
Subject(s) - non blocking i/o , relaxation (psychology) , materials science , protein filament , resistive touchscreen , polarity (international relations) , condensed matter physics , non volatile memory , chemical physics , optoelectronics , chemistry , composite material , electrical engineering , physics , psychology , social psychology , biochemistry , cell , engineering , catalysis
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