Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness
Author(s) -
HanSol Jun,
Jin Choi,
Kei Ashiba,
Sun Hwa Jung,
Miri Park,
Jong-Ung Baek,
Tae-Hun Shim,
JeaGun Park
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0007064
Subject(s) - quantum tunnelling , perpendicular , condensed matter physics , spin valve , magnetoresistive random access memory , tunnel magnetoresistance , materials science , spin transfer torque , tunnel junction , magnetoresistance , spin (aerodynamics) , ferromagnetism , magnetic field , magnetization , optoelectronics , physics , random access memory , mathematics , geometry , quantum mechanics , computer science , computer hardware , thermodynamics
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