Open AccessInterface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification
Author(s) -
Takamitsu Ishihara,
Yasushi Nakasaki,
Daisuke Matsushita,
Kosuke Tatsumura,
Koichi Kato
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0005813
Subject(s) - dangling bond , oxygen , hydrogen , annealing (glass) , silicon , materials science , mosfet , interface (matter) , chemical physics , chemistry , atomic physics , optoelectronics , electrical engineering , voltage , transistor , adsorption , composite material , physics , gibbs isotherm , organic chemistry , engineering
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