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Defects controlled doping and electrical transport in TiS2 single crystals
Author(s) -
Ke Chen,
Meng Song,
YiYang Sun,
Hai Xu,
Dongchen Qi,
Zhenhuang Su,
Xingyu Gao,
Qian Xu,
Jun Hu,
Junfa Zhu,
Ranran Zhang,
Jie Wang,
Lei Zhang,
Liang Cao,
Yuyan Han,
Yimin Xiong
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0005170
Subject(s) - doping , materials science , raman spectroscopy , electrical resistivity and conductivity , semiconductor , acceptor , fermi level , chemical physics , conductivity , electron mobility , optoelectronics , charge carrier , analytical chemistry (journal) , condensed matter physics , electron , chemistry , optics , electrical engineering , quantum mechanics , physics , chromatography , engineering

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