Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 | Zendy

Evan M. Cornuelle | Zendy; Tyler A. Growden | Zendy; David F. Storm | Zendy; E. R. Brown | Zendy; Weidong Zhang | Zendy; Brian P. Downey | Zendy; Vikrant J. Gokhale | Zendy; Laura B. Ruppalt | Zendy; James G. Champlain | Zendy; Prudhvi Peri | Zendy; Martha R. McCartney | Zendy; David J. Smith | Zendy; David J. Meyer | Zendy; Paul R. Berger | Zendy

Open Access

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Author(s) -

Evan M. Cornuelle,

Tyler A. Growden,

David F. Storm,

E. R. Brown,

Weidong Zhang,

Brian P. Downey,

Vikrant J. Gokhale,

Laura B. Ruppalt,

James G. Champlain,

Prudhvi Peri,

Martha R. McCartney,

David J. Smith,

David J. Meyer,

Paul R. Berger

Publication year - 2020

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0005062

Subject(s) - molecular beam epitaxy , materials science , diode , resonant tunneling diode , figure of merit , optoelectronics , current density , quantum tunnelling , yield (engineering) , substrate (aquarium) , equivalent series resistance , layer (electronics) , epitaxy , voltage , quantum well , optics , nanotechnology , laser , physics , oceanography , quantum mechanics , geology , metallurgy

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