Open AccessCarrier recombination parameters in diamond after surface boron implantation and annealing
Author(s) -
Paulius Grivickas,
Patrik Ščajev,
N.M. Kazuchits,
A.V. Mazanik,
О. В. Королик,
Lars F. Voss,
A. M. Conway,
David L. Hall,
Mihail Bora,
L. Subačius,
V. Bikbajevas,
V. Grivickas
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0004881
Subject(s) - diamond , ion implantation , recombination , annealing (glass) , materials science , boron , vacancy defect , nitrogen , carrier lifetime , analytical chemistry (journal) , molecular physics , range (aeronautics) , optoelectronics , silicon , atomic physics , chemistry , crystallography , ion , metallurgy , composite material , biochemistry , organic chemistry , chromatography , gene , physics