Carrier recombination parameters in diamond after surface boron implantation and annealing | Zendy

Paulius Grivickas | Zendy; Patrik Ščajev | Zendy; N.M. Kazuchits | Zendy; A.V. Mazanik | Zendy; O.V. Korolik | Zendy; Lars F. Voss | Zendy; Adam Conway | Zendy; David L. Hall | Zendy; Mihail Bora | Zendy; L. Subačius | Zendy; V. Bikbajevas | Zendy; V. Grivickas | Zendy

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Carrier recombination parameters in diamond after surface boron implantation and annealing

Author(s) -

Paulius Grivickas,

Patrik Ščajev,

N.M. Kazuchits,

A.V. Mazanik,

O.V. Korolik,

Lars F. Voss,

Adam Conway,

David L. Hall,

Mihail Bora,

L. Subačius,

V. Bikbajevas,

V. Grivickas

Publication year - 2020

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/5.0004881

Subject(s) - diamond , ion implantation , recombination , annealing (glass) , materials science , boron , vacancy defect , nitrogen , carrier lifetime , analytical chemistry (journal) , molecular physics , range (aeronautics) , optoelectronics , silicon , atomic physics , chemistry , crystallography , ion , metallurgy , composite material , biochemistry , organic chemistry , chromatography , gene , physics

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