z-logo
open-access-imgOpen Access
Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Author(s) -
Wei Liu,
Camille Haller,
Yao Chen,
Thomas F. K. Weatherley,
J.F. Carlin,
Gwénolé Jacopin,
R. Butté,
N. Grandjean
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0004321
Subject(s) - auger effect , auger , voltage droop , materials science , photoluminescence , spontaneous emission , quantum well , light emitting diode , optoelectronics , radiative transfer , atomic physics , physics , optics , laser , quantum mechanics , voltage divider , voltage

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom