Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Author(s) -
Wei Liu,
Camille Haller,
Yao Chen,
Thomas F. K. Weatherley,
J.F. Carlin,
Gwénolé Jacopin,
R. Butté,
N. Grandjean
Publication year - 2020
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0004321
Subject(s) - auger effect , auger , voltage droop , materials science , photoluminescence , spontaneous emission , quantum well , light emitting diode , optoelectronics , radiative transfer , atomic physics , physics , optics , laser , quantum mechanics , voltage divider , voltage
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom