z-logo
open-access-imgOpen Access
Impact of fluorine doping on solution-processed In–Ga–Zn–O thin-film transistors using an efficient aqueous route
Author(s) -
Masashi Miyakawa,
Mitsuru Nakata,
Hiroshi Tsuji,
Hiroaki Iino,
Yoshihide Fujisaki
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0003855
Subject(s) - thin film transistor , materials science , doping , fluorine , optoelectronics , oxide , oxide thin film transistor , transistor , aqueous solution , semiconductor , metal , nanotechnology , electrical engineering , metallurgy , chemistry , layer (electronics) , engineering , voltage

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom