Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces | Zendy

Eito Higa | Zendy; Mitsuru Sometani | Zendy; Hirohisa Hirai | Zendy; Hiroshi Yano | Zendy; Shinsuke Harada | Zendy; T. Umeda | Zendy

Open Access

Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces

Author(s) -

Eito Higa,

Mitsuru Sometani,

Hirohisa Hirai,

Hiroshi Yano,

Shinsuke Harada,

T. Umeda

Publication year - 2020

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/5.0002944

Subject(s) - annealing (glass) , materials science , nitriding , dangling bond , nitrogen , semiconductor , oxide , analytical chemistry (journal) , optoelectronics , silicon , chemistry , nanotechnology , metallurgy , layer (electronics) , organic chemistry , chromatography

We investigated interface defects formed on a-face and m-face 4H-SiC/SiO2 interfaces after interface nitridation by nitric oxide (NO) post-oxidation annealing (POA). Using electrically detected mag...

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