Open AccessHydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
Author(s) -
Jibran Hussain,
Haris Naeem Abbasi,
Wei Wang,
Yanfeng Wang,
Ruozheng Wang,
Hongxing Wang
Publication year - 2020
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0002120
Subject(s) - materials science , atomic layer deposition , dielectric , optoelectronics , mosfet , high κ dielectric , bilayer , gate dielectric , transistor , nanotechnology , layer (electronics) , electrical engineering , voltage , chemistry , biochemistry , engineering , membrane
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