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Response to ‘‘Comment on ‘Low-temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 5 3, 1665 (1988)]
Author(s) -
S. Tachi,
Kazunori Tsujimoto,
Sadayuki Okudaira
Publication year - 1988
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.99793
Subject(s) - etching (microfabrication) , reactive ion etching , silicon , microwave , plasma , plasma etching , ion , materials science , atomic physics , dry etching , analytical chemistry (journal) , chemistry , optoelectronics , physics , nanotechnology , organic chemistry , layer (electronics) , quantum mechanics , chromatography

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