Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’ ’’ [Appl. Phys. Lett. 5 2, 2269 (1988)]
Author(s) -
V. Hinkel,
L. Sorba,
Henrik Haak,
K. Horn,
W. Braun
Publication year - 1988
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.99773
Subject(s) - epitaxy , diffusion , materials science , condensed matter physics , silicon , physics , optoelectronics , nanotechnology , thermodynamics , layer (electronics)
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