Open AccessComment on ‘‘Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)’’ [Appl. Phys. Lett. 5 0, 1257 (1987)]
Author(s) -
F. M. d’Heurle,
Ο. Thomas
Publication year - 1988
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.99772
Subject(s) - epitaxy , diffusion , silicon , materials science , condensed matter physics , crystallography , chemistry , physics , nanotechnology , optoelectronics , thermodynamics , layer (electronics)
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