Open AccessMeasurement of ultrafast hot-carrier relaxation in silicon by thin-film-enhanced, time-resolved reflectivity
Author(s) -
Fuad E. Doany,
D. Grischkowsky
Publication year - 1988
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.99309
Subject(s) - silicon , ultrashort pulse , materials science , reflectivity , relaxation (psychology) , thin film , enhanced data rates for gsm evolution , optics , carrier lifetime , optoelectronics , nanotechnology , physics , laser , psychology , social psychology , telecommunications , computer science
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