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Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 50, 1533 (1987)]
Author(s) -
Akira Suzuki,
Atsuko Uemoto,
Mitsuhiro Shigeta,
Katsuki Furukawa,
Shigeo Nakajima
Publication year - 1987
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.97772
Subject(s) - chemical vapor deposition , doping , materials science , nitrogen , beta (programming language) , condensed matter physics , electrical resistivity and conductivity , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , physics , organic chemistry , chromatography , computer science , programming language , quantum mechanics

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