Compensation in epitaxial cubic SiC films | Zendy

B. Segall | Zendy; Samuel A. Alterovitz | Zendy; E. J. Haugland | Zendy; L. G. Matus | Zendy

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Compensation in epitaxial cubic SiC films

Author(s) -

B. Segall,

Samuel A. Alterovitz,

E. J. Haugland,

L. G. Matus

Publication year - 1986

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.97048

Subject(s) - epitaxy , materials science , nitrogen , hall effect , analytical chemistry (journal) , chemical vapor deposition , ionization , cubic crystal system , thin film , crystallography , electrical resistivity and conductivity , chemistry , nanotechnology , ion , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography

Hall measurements on four n‐type cubic SiC films epitaxially grown by chemical vapor deposition on (100) Si substrates are reported. Detailed analyses of the temperature‐dependent carrier concentrations indicate that the samples are highly compensated (>90%), contrary to the assumption of no compensation made in previous studies of similarly prepared SiC films. Donor ionization energies ED are found to be less than one‐half the values previously reported. The values for ED and the donor concentration ND, combined with results for small bulk platelets with nitrogen donors, suggest the relation ED(ND)=ED(0)−αN1/3D for cubic SiC. A curve fit gives α≂2.6×10−5 meV cm and ED(0)≂48 meV, which is the generally accepted value of ED(0) for nitrogen donors in cubic SiC.

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