Open AccessErratum: Preparation and electrical properties of InPxOy gate insulators on InP [Appl. Phys. Lett. 4 8, 375 (1986)]
Author(s) -
H. L. Chang,
L. G. Meiners,
C. J.
Publication year - 1986
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.97039
Subject(s) - condensed matter physics , materials science , physics , optoelectronics
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