Time-resolved and space-resolved Si lattice-temperature measurements during cw laser annealing of Si on sapphire | Zendy

Kouichi Murakami | Zendy; Yoshinori Tohmiya | Zendy; K. Takita | Zendy; Kohzoh Masuda | Zendy

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Time-resolved and space-resolved Si lattice-temperature measurements during cw laser annealing of Si on sapphire

Author(s) -

Kouichi Murakami,

Yoshinori Tohmiya,

K. Takita,

Kohzoh Masuda

Publication year - 1984

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.95347

Subject(s) - sapphire , materials science , annealing (glass) , laser , optics , melting point , lattice (music) , microscope , optoelectronics , temperature measurement , physics , quantum mechanics , composite material , acoustics

We have developed an optical technique for in situ measurement of temporal change and spacial profile of Si lattice temperature during cw laser annealing. This technique utilizes time-dependent optical interference in Si films on insulator. By using a microscope for focusing a laser probe beam to 2.0 µm, time-resolved and space-resolved Si lattice-temperatures were measured below the melting point (1412 °C) on a time scale of 10−4–100 s during cw laser annealing of Si on sapphire

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