Substitutional nitrogen impurities in pulsed-laser annealed silicon | Zendy

Kouichi Murakami | Zendy; Hisayoshi Itoh | Zendy; K. Takita | Zendy; Kohzoh Masuda | Zendy

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Substitutional nitrogen impurities in pulsed-laser annealed silicon

Author(s) -

Kouichi Murakami,

Hisayoshi Itoh,

K. Takita,

Kohzoh Masuda

Publication year - 1984

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.95160

Subject(s) - impurity , silicon , annealing (glass) , materials science , electron paramagnetic resonance , doping , analytical chemistry (journal) , nitrogen , crystallographic defect , ion , ion implantation , crystallography , nuclear magnetic resonance , chemistry , optoelectronics , metallurgy , physics , organic chemistry , chromatography

Single-crystal Si samples with nitrogen (N) impurities (Si:N) and with N and phosphorus (P) impurities (Si:N:P) have been investigated by electron spin resonance measurements. It was found that substitutional N impurities Ns cannot be incorporated into Si by cw laser annealing of N ion-implanted Si or by N doping during crystal growth; however, Ns is incorporated into Si by pulsed-laser annealing (PLA) of N ion-implanted Si. The spin density of Ns decreases with doping of P shallow donors into PLA Si:N and increases by introduction of slight point defects in PLA Si:N:P. These results suggest that Ns with a negative charge are formed in PLA Si: N:P system

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