Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon | Zendy

U. Shreter | Zendy; R. Fernandez | Zendy; M−A. Nicolet | Zendy

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Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi2 on silicon

Author(s) -

U. Shreter,

R. Fernandez,

M−A. Nicolet

Publication year - 1983

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.94314

Subject(s) - sputtering , silicon , irradiation , materials science , analytical chemistry (journal) , ion , diffusion , layer (electronics) , thin film , rutherford backscattering spectrometry , stoichiometry , yield (engineering) , thermal diffusivity , chemistry , composite material , metallurgy , nanotechnology , physics , organic chemistry , chromatography , nuclear physics , thermodynamics , quantum mechanics

Measurements of sputtering yields and composition profiles have been carried out using backscattering spectrometry for samples of CrSi2 on Si irradiated with 200‐keV Xe ions. When the CrSi2 layer is thinner than the ion range, the sputtering yield ratio of Si to Cr increases from 3.5 for room‐temperature irradiation to 65 at 290 °C. For a thick sample, the corresponding increase is from 2.4 to 4.0. only. These changes are explained in terms of a rise in the Si surface concentration at 290 °C. The driving force for this process seems to be the establishment of stoichiometric CrSi2 compound. Transport of Si to the surface is by ion mixing in the thin sample and thermal diffusion through the thick layer.

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