Calculation of the dynamics of surface melting during laser annealing | Zendy

C. M. Surko | Zendy; A. L. Simons | Zendy; D. H. Auston | Zendy; J. A. Golovchenko | Zendy; R. E. Slusher | Zendy; T. Venkatesan | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Calculation of the dynamics of surface melting during laser annealing

Author(s) -

C. M. Surko,

A. L. Simons,

D. H. Auston,

J. A. Golovchenko,

R. E. Slusher,

T. Venkatesan

Publication year - 1979

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.90619

Subject(s) - annealing (glass) , materials science , semiconductor , laser , pulsed laser , melting point , thermal , thermodynamics , optics , composite material , optoelectronics , physics

We present a thermal transport model to describe the melting and resolidification of semiconductors which is observed to occur during annealing with a pulsed laser. The temperature‐dependent properties of both the solid and liquid are included. We compare this calculation with experimental results for the time duration of the melted surface for crystalline Si and Ge. The temperature of the liquid surface as a function of time is calculated and effects associated with the hot liquid and the vapor are also discussed.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research