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The conduction‐ and valence‐band discontinuities for the (110) GaAs‐Ge heterojunction have been measured as ΔEc=0.50 eV and ΔEv=0.25 eV by the angle‐resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.

Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction