Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction | Zendy

P. Perfetti | Zendy; D. Denley | Zendy; K. A. Mills | Zendy; D. A. Shirley | Zendy

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Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunction

Author(s) -

P. Perfetti,

D. Denley,

K. A. Mills,

D. A. Shirley

Publication year - 1978

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.90458

Subject(s) - angle resolved photoemission spectroscopy , heterojunction , classification of discontinuities , conduction band , valence band , materials science , semimetal , ultraviolet , condensed matter physics , electronic band structure , valence (chemistry) , electronic structure , band gap , atomic physics , optoelectronics , chemistry , physics , electron , mathematical analysis , mathematics , organic chemistry , quantum mechanics

The conduction‐ and valence‐band discontinuities for the (110) GaAs‐Ge heterojunction have been measured as ΔEc=0.50 eV and ΔEv=0.25 eV by the angle‐resolved ultraviolet photoemission (ARUPS) technique. These values are in good agreement with the theoretical predictions of Pickett et al.

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