Time-resolved reflectivity of ion-implanted silicon during laser annealing | Zendy

D. H. Auston | Zendy; C. M. Surko | Zendy; T. Venkatesan | Zendy; R. E. Slusher | Zendy; J. A. Golovchenko | Zendy

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Time-resolved reflectivity of ion-implanted silicon during laser annealing

Author(s) -

D. H. Auston,

C. M. Surko,

T. Venkatesan,

R. E. Slusher,

J. A. Golovchenko

Publication year - 1978

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.90369

Subject(s) - annealing (glass) , silicon , materials science , nanosecond , ion implantation , arsenic , laser , optics , optoelectronics , ion , analytical chemistry (journal) , chemistry , metallurgy , physics , organic chemistry , chromatography

The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was observed to change abruptly to the value consistent with liquid silicon and to remain at that value for a period of time which ranged from a few tens of nanoseconds to several hundreds of nanoseconds, depending on the annealing pulse intensity. Concurrently, the transmission of the primary annealing beam dropped abruptly. These observations confirm the formation of a metallic liquid phase at the crystal surface during the annealing process.

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