Annealing of Te-implanted GaAs by ruby laser irradiation | Zendy

J. A. Golovchenko | Zendy; T. Venkatesan | Zendy

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Annealing of Te-implanted GaAs by ruby laser irradiation

Author(s) -

J. A. Golovchenko,

T. Venkatesan

Publication year - 1978

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.89962

Subject(s) - ruby laser , irradiation , annealing (glass) , materials science , laser , ion implantation , tellurium , redistribution (election) , ion , amorphous solid , radiation , channelling , analytical chemistry (journal) , crystallography , optics , chemistry , metallurgy , physics , organic chemistry , politics , political science , nuclear physics , law , chromatography

A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser‐irradiated sample is more than ten times the known maximum solubility of Te in GaAs.

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