Effects of ion-implanted atoms upon conduction electron spin resonance (CESR) in a Si : P system | Zendy

K. Murakami | Zendy; K. Masuda | Zendy; Kenji Gamo | Zendy; S. Namba | Zendy

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Effects of ion-implanted atoms upon conduction electron spin resonance (CESR) in a Si : P system

Author(s) -

K. Murakami,

K. Masuda,

Kenji Gamo,

S. Namba

Publication year - 1977

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.89382

Subject(s) - electron paramagnetic resonance , ion , electron , conduction electron , resonance (particle physics) , thermal conduction , impurity , spin (aerodynamics) , materials science , condensed matter physics , atomic physics , silicon , ion implantation , chemistry , nuclear magnetic resonance , physics , optoelectronics , organic chemistry , quantum mechanics , composite material , thermodynamics

The behavior of the conduction electron spin resonance of ion-implanted (Si : P) : Sb and (Si : P) : Te systems is observed to be strongly modified by the presence of Sb or Te substitutional atoms in shallower surface layers; i.e., the ESR signal shows an anomalous line broadening. The origin of the anomalous broadening may be due to the spin-orbit interaction between the conduction electrons contained within a thin layer (<=25 µm) and implanted Sb or Te impurities contained within a thin layer (.=.0.1 µm)

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