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Radioactive silicon as a marker in thin-film silicide formation
Author(s) -
R. Pretoriüs,
Chuck Ramiller,
S.S. Lau,
M.−A. Nicolet
Publication year - 1977
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.89230
Subject(s) - silicide , silicon , materials science , grain boundary , substrate (aquarium) , rutherford backscattering spectrometry , diffusion , vacancy defect , grain boundary diffusion coefficient , metallurgy , analytical chemistry (journal) , thin film , radiochemistry , chemistry , crystallography , nanotechnology , microstructure , physics , oceanography , chromatography , thermodynamics , geology

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