Open AccessDoes high density–low pressure etching depend on the type of plasma source?
Author(s) -
N. Hershkowitz,
Ji Cheng Ding,
R. A. Breun,
R. T. S. Chen,
Jacqueline Meyer,
A. K. Quick
Publication year - 1996
Publication title -
physics of plasmas
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.75
H-Index - 160
eISSN - 1089-7674
pISSN - 1070-664X
DOI - 10.1063/1.871675
Subject(s) - helicon , wafer , electron cyclotron resonance , etching (microfabrication) , plasma , inductively coupled plasma , plasma etching , etch pit density , reactive ion etching , langmuir probe , torr , physics , atomic physics , analytical chemistry (journal) , optoelectronics , materials science , plasma diagnostics , nanotechnology , chemistry , layer (electronics) , thermodynamics , nuclear physics , chromatography
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