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Erratum: Peculiarities in the electron properties of δ〈Sb〉-layers in epitaxial silicon. III. Electron–phonon relaxation [Low Temp. Physics 23, 303–307 (April 1997)]
Author(s) -
V. Yu. Kashirin,
Yu. F. Komnik,
Aleksei Anopchenko,
O. A. Mironov,
C. J. Emeleus,
T. E. Whall
Publication year - 1997
Publication title -
low temperature physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.356
H-Index - 43
eISSN - 1090-6517
pISSN - 1063-777X
DOI - 10.1063/1.593431
Subject(s) - physics , condensed matter physics , electron , silicon , epitaxy , relaxation (psychology) , phonon , materials science , nuclear physics , nanotechnology , optoelectronics , psychology , social psychology , layer (electronics)

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