Open AccessImpact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass
Author(s) -
Albert J. Juhasz,
Roy C. Tew,
Gene E. Schwarze
Publication year - 1999
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.57627
Subject(s) - silicon carbide , electronics , radiation hardening , power electronics , materials science , silicon , radiation , power (physics) , optoelectronics , engineering physics , electrical engineering , metallurgy , physics , engineering , optics , quantum mechanics
The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kWe, 1 MWe, and 10 MWe) for near term technology (i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power sys...
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