Prospects for single atom sensitivity measurements of dopant levels in silicon
Author(s) -
Richard Vanfleet,
M. J. Robertson,
M. R. McKay,
J. Silcox
Publication year - 1998
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1063/1.56884
Subject(s) - dopant , scanning transmission electron microscopy , silicon , atom (system on chip) , materials science , scattering , atom probe , resolution (logic) , electron , image resolution , atomic physics , analytical chemistry (journal) , transmission electron microscopy , optics , doping , chemistry , optoelectronics , physics , nanotechnology , quantum mechanics , chromatography , artificial intelligence , computer science , embedded system
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom