Comparison of measured and modeled scanning capacitance microscopy images across p-n junctions
Author(s) -
Joseph J. Kopanski,
J. F. Marchiando,
John Albers,
Brian G. Rennex
Publication year - 1998
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1063/1.56858
Subject(s) - dopant , capacitance , materials science , monte carlo method , scanning capacitance microscopy , voltage , p–n junction , dopant activation , biasing , analytical chemistry (journal) , condensed matter physics , doping , scanning electron microscope , chemistry , optoelectronics , mathematics , physics , electrode , statistics , scanning confocal electron microscopy , composite material , quantum mechanics , semiconductor , chromatography
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