Open AccessTwo dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation
Author(s) -
J. Kim,
J. S. McMurray,
C. C. Williams,
J. Slinkman
Publication year - 1998
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1063/1.56857
Subject(s) - dopant , diffusion , capacitance , scanning capacitance microscopy , materials science , doping , analytical chemistry (journal) , silicon , diffusion process , optoelectronics , scanning electron microscope , chemistry , thermodynamics , composite material , physics , computer science , knowledge management , innovation diffusion , electrode , chromatography , scanning confocal electron microscopy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom