Open AccessFabrication of SiGe and SiGeC epitaxial layers by ion implantation and excimer laser annealing
Author(s) -
Pierre Boher,
J.L. Stehlé,
J.P. Piel,
É. Fogarassy
Publication year - 1998
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1063/1.56811
Subject(s) - materials science , epitaxy , excimer laser , ion implantation , optoelectronics , germanium , monocrystalline silicon , annealing (glass) , laser , fabrication , semiconductor , alloy , silicon , ion , optics , nanotechnology , metallurgy , chemistry , layer (electronics) , medicine , physics , alternative medicine , organic chemistry , pathology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom