Open AccessLeakage compensated charge method for determining static C-V characteristics of ultra-thin MOS capacitors
Author(s) -
Hui Song,
Edwin Dons,
Xi Qing Sun,
K.R. Farmer
Publication year - 1998
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1063/1.56800
Subject(s) - materials science , capacitance , capacitor , leakage (economics) , dielectric , silicon , optoelectronics , quantum tunnelling , gate dielectric , voltage , electronic engineering , electrical engineering , transistor , electrode , chemistry , engineering , economics , macroeconomics
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