Open AccessControl of Schottky barrier height in metal/β-Ga2O3 junctions by insertion of PdCoO2 layers
Author(s) -
T. Harada,
Atsushi Tsukazaki
Publication year - 2020
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5145117
Subject(s) - schottky barrier , materials science , schottky diode , dipole , semiconductor , optoelectronics , metal , layer (electronics) , metal–semiconductor junction , condensed matter physics , nanotechnology , chemistry , physics , organic chemistry , diode , metallurgy
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