Open AccessMetal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing
Author(s) -
Tsung-En Lee,
Mengnan Ke,
Kimihiko Kato,
Mitsuru Takenaka,
Shinichi Takagi
Publication year - 2020
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5144198
Subject(s) - annealing (glass) , tin , materials science , oxide , metal , metal gate , tin oxide , gate oxide , metallurgy , electrical engineering , transistor , voltage , engineering
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